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| 2SD1601 Description |
| Power Transistor
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlington Power Transistor
2SD1601
DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 60V(Min) ·High DC Current Gain : hFE= 1000(Min) @IC= 2A ·Complement to Type 2SB1101
APPLICATIONS ·Designed for low frequency power amplifiers applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
w w
s c s i . w
VALUE 60 V
Inchange Semiconductor |
| Related Part Number |
2SD750 | 2SD1802 2SD1781KR | 2SD1069 2SD757 | 2SD2162 |
| DataSheet.es | 2020 | Contacto |