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| 2SC6079 Description |
| Silicon NPN Epitaxial Type
2SC6079
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC6079
Power Amplifier Applications Power Switching Applications
Low collector saturation voltage: VCE (sat) = 0.5 V (max)(IC = 1A) High-speed switching: tstg = 0.4 μs (typ)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Collector-base voltage Collector-emitter voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature rang
Toshiba Semiconductor |
| Related Part Number |
2SC5928 | 2SC1879 2SC1741AM | 2SC1974 2SC4528 | 2SC4766 |
| DataSheet.es | 2020 | Contacto |