2SC5885 PDF File ( Datasheet )

Power Transistors 2SC5885 Silicon NPN triple diffusion mesa type Horizontal deflection output for TV, CRT monitor 9.9±0.3 3.0±0.2 Unit: mm 4.6±0.2 2.9±0.2 I Features 15.0±0.3 8.0±0.2 1.0±0.1 High breakdown voltage: VCBO ≥ 1 500 V Wide safe operation area Built-in dumper diode φ3.2±0.1 13.7+0.5 -0.2 2.0±0.2 Solder Dip I Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (E-B short) Emitter-base voltage (Collector o

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC5885 DESCRIPTION ·High Breakdown Voltage: VCBO= 1500V (Min) ·Wide Area of Safe Operation ·Built-in Damper Diode APPLICATIONS ·Horizontal deflection output for TV, CRT monitor applicaitions. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCES Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current- Continuous w w s c s i . w 1500 V