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2SC5548A PDF File ( Datasheet )

Toshiba
2SC5548A(TE16L1,NQ
Power Bipolar Transistor, 2A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin

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2SC5548A Description
Silicon NPN Triple Diffused Type TRANSISTOR

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5548A High Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications 2SC5548A Unit: mm High speed switching: tr = 0.5 μs (max), tf = 0.3 μs (max) (IC = 0.8 A) High collector breakdown voltage: VCEO = 400 V High DC current gain: hFE = 40 (min) (IC = 0.2 A) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base volt
Toshiba Semiconductor
Toshiba Semiconductor



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