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2SC5459 PDF File ( Datasheet )

Toshiba
2SC5459
Power Bipolar Transistor, 3A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
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2SC5459 Description
Silicon NPN Triple Diffused Type TRANSISTOR

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5459 Switching Regulator Applications High-Voltage Switching Applications DC-DC Converter Applications 2SC5459 Unit: mm High-speed switching: tf = 0.3 μs (max) (IC = 1.2 A) High collector breakdown voltage: VCEO = 400 V High DC current gain: hFE = 20 (min) (IC = 0.3 A) Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current

Toshiba Semiconductor
Toshiba Semiconductor




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