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| 2SC5346 Description |
| Silicon NPN epitaxial planer type(For low-frequency high breakdown voltage amplification)
Transistor
2SC5346
Silicon NPN epitaxial planer type
For low-frequency high breakdown voltage amplification Complementary to 2SA1982
6.9±0.1
0.15
Unit: mm
1.05 2.5±0.1 ±0.05 (1.45) 0.8
0.5 4.5±0.1 0.45 0.05 2.5±0.1
0.7
4.0
s Features
q q q
Satisfactory linearity of forward current transfer ratio hFE. High collector to emitter voltage VCEO. Small collector output capacitance Cob.
0.65 max.
1.0 1.0
0.2
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitt
Panasonic Semiconductor |
| Transistor, Silicon PNP Epitaxial Type
Transistor
2SC5346
Silicon NPN epitaxial planer type
For low-frequency high breakdown voltage amplification Complementary to 2SA1982
6.9±0.1
0.15
Unit: mm
1.05 2.5±0.1 ±0.05 (1.45) 0.8
0.5 4.5±0.1 0.45 0.05 2.5±0.1
0.7
4.0
s Features
q q q
Satisfactory linearity of forward current transfer ratio hFE. High collector to emitter voltage VCEO. Small collector output capacitance Cob.
0.65 max.
1.0 1.0
0.2
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitt
Panasonic Semiconductor |
| Related Part Number |
2SC144 | 2SC3710A 2SCR523UB | 2SC1362 2SCR543D | 2SC5450 |
| DataSheet.es | 2020 | Contacto |