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2SC5296 PDF File ( Datasheet )



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Panasonic
2SC5296
Power Bipolar Transistor, 8A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
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2SC5296 Description
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications

w w w . D a t a S h e e t . c o . k r Ordering number:ENN5290A NPN Triple Diffused Planar Silicon Transistor 2SC5296 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features · High speed : tf=100ns typ. · High breakdown voltage : VCBO=1500V. · High reliability (Adoption of HVP process). · Adoption of MBIT process. · On-chip damper diode. Package Dimensions unit:mm 2039D [2SC5296] 3.4 16.0 5.0 8.0 5.6 3.1 21.0 22.0 4.0 2.8 2.0 20.4 1.0 2.

Sanyo Semicon Device
Sanyo Semicon Device
Silicon NPN Power Transistors

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5296 DESCRIPTION ¡¤ With TO-3PML package ¡¤ High breakdown voltage, high reliability. ¡¤ High speed ¡¤ Built in damper diode APPLICATIONS ¡¤ Ultrahigh-definition CRT display ¡¤ Horizontal deflection output applications PINNING PIN 1 2 3 Base Collector DESCRIPTION ¡¤ Absolute maximum ratings(Ta=25¡æ ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER R O T U D 半 N O C 固 I EM S E G N A INCH CONDITIONS

Inchange Semiconductor
Inchange Semiconductor




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