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2SC5181 PDF File ( Datasheet )

NEC
2SC5181-T1
RF Small Signal Bipolar Transistor, 0.01A I(C), 1-Element, L Band, Silicon, NPN

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2SC5181 Description
NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION

DATA SHEET SILICON TRANSISTOR 2SC5181 NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES Low current consumption and high gain |S21e|2 = 10.5 dBTYP. @ VCE = 2 V, IC = 7 mA, f = 2 GH- |S21e|2 = 9.0 dBTYP. @VCE = 1 V, IC = 5 mA, f = 2 GH- Ultra Super Mini-Mold package PACKAGE DIMENSIONS (Units: mm) 1.6 ± 0.1 0.8 ± 0.1 2 1.6 ± 0.1 0.2 +0.1 0 0.5 0.3 +0.1 0 0.15 +0.1 0.05 ORDERING INFORMATION PART NUMBER 2SC5181 2SC5181-T1 QU
NEC
NEC



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