2SC5089 PDF File ( Datasheet )

INCHANGE Semiconductor isc Silicon NPN RF Transistor isc RF Product Specification 2SC5089 DESCRIPTION ·High Gain Bandwidth Product fT = 10 GH- TYP. ·High Gain, Low Noise Figure S21e 2 = 13 dB TYP., NF = 1.1 dB TYP @ f = 1 GHz APPLICATIONS ·Designed for VHF~UHF band low noise amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 10 V VEBO Emitter-Base Voltage 1.5 V IC Collector Curr

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5089 2SC5089 VHF~UHF Band Low Noise Amplifier Applications Low noise figure, high gain. NF = 1.1dB, |S21e|2 = 13dB (f = 1 GHz) Absolute Maximum Ratings (Ta = 25°C) Unit: mm Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 1.5 V Base current IB 20 mA Collector current IC 40 mA Collector power dissipation PC 150 mW Junction temperature Tj