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| 2SC5069 Description |
| NPN Epitaxial Planar Silicon Transistor
Ordering number:EN4509
NPN Epitaxial Planar Silicon Transistor
2SC5069
Low-Frequency General-Purpose Amplifier, Driver Applications
Features
· High current capacity. · Adoption of MBIT process. · High DC current gain. · Low collector-to-emitter saturation voltage. · High VEBO.
Package Dimensions
unit:mm 2038A
[2SC5069]
4.5 1.6
1.5
1.0 2.5 4.25max
0.4 0.5
32 1.5
1
3.0
0.75
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emit
Sanyo Semicon Device |
| NPN Epitaxial Planar Silicon Transistor
SMD Type
Transistors
NPN Epitaxial Planar Silicon Transistor 2SC5069
Features
High current capacity. Adoption of MBIT process. High DC current gain. Low collector-to-emitter saturation voltage. High VEBO.
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Base Current Collector dissipation Junction temperature Storage temperature * Mounted on ceramic board(250mm X0.8mm).
2
Symbol VCBO VC
Kexin |
| Related Part Number |
2SC3440-HF | 2SC5704-A 2SC5658FHA | 2SC5949 2SC1629 | 2SC5116 |
| DataSheet.es | 2020 | Contacto |