2SC5064 PDF File ( Datasheet )

INCHANGE Semiconductor isc Silicon NPN RF Transistor isc RF Product Specification 2SC5064 DESCRIPTION ·Low Noise and High Gain NF = 1.1 dB TYP., S21e 2= 12 dB TYP. @VCE = 5 V, f = 1.0 GHz APPLICATIONS ·Designed for VHF~UHF band low noise amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base Voltage 3.0 V IC Collector Current-Continuous 30 mA IB Base Current-

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5064 2SC5064 VHF~UHF Band Low Noise Amplifier Applications Low noise figure, high gain. NF = 1.1dB, |S21e|2 = 12dB (f = 1 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Base current Collector current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IB IC PC Tj Tstg 20 12 3 15 30