2SC4603R PDF File ( Datasheet )

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4603R DESCRIPTION ·High Collector-Emitter Breakdown Voltage: V(BR)CEO= 800V(Min.) ·High Switching Speed ·High Reliability APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Curren