2SC4523 PDF File ( Datasheet )

Ordering number:EN3142A NPN Epitaxial Planar Silicon Transistors 2SC4523 High-Speed Switching Applications Features · Adoption of FBET, MBIT process. · Large current capacity. · Low collector-to-emitter saturation voltage. · Fast switching speed. Package Dimensions unit:mm 2045B [2SC4522] 6.5 5.0 4 2.3 0.5 5.5 1.5 7.0 unit:mm 2044B 0.85 0.7 0.6 123 2.3 2.3 0.8 1.6 7.5 1.2 1 : Base 0.5 2 : Collector 3 : Emitter 4 : Collector SANYO : TP [2SC4522] 6.5 2.3 5.0 0.5 4 0.8 5.5 1.5 2.5 7.

SMD Type High-Speed Switching Applications 2SC4523 TO-252 +0.15 1.50 -0.15 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features Large current capacity. Low collector-to-emitter saturation voltage. +0.2 9.70 -0.2 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 Fast switching speed. 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base vo