2SC4442 PDF File ( Datasheet )

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4442 DESCRIPTION ·Collector-Base Breakdown Voltage: V(BR)CBO= 500V(Min.) ·Wide Area of Safe Operation ·High Speed Switching · APPLICATIONS ·Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCES Collector-Emitter Voltage VCEO Collector-Emitter Voltage VEBO IC Emitter-Base Voltage w w s c s i . w 500