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2SC4213 PDF File ( Datasheet )
Toshiba
2SC4213-B(TE85L,F)
20V 100mW 300mA 30MHz 42mV@30A3mA NPN +125¡Í@(Tj) SC-70 Bipolar Transistors - BJT ROHS
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| 2SC4213 Description |
| Silicon NPN Epitaxial Type TRANSISTOR
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC4213
2SC4213
For Muting and Switching Applications
Unit: mm
High emitter-base voltage: VEBO = 25 V (min) High reverse hFE: Reverse hFE = 150 (typ.) (VCE = 2 V, IC = 4 mA) Low on resistance: RON = 1 Ω (typ.) (IB = 5 mA) High DC current gain: hFE = 200~1200 Small package
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 50 V
Collector-emitter voltage
VCEO 20 V
Em
 Toshiba Semiconductor |
| Silicon NPN Epitaxial
SMD Type
Silicon NPN Epitaxial 2SC4213
Features
High emitter-base voltage: VEBO = 25 V (min). High reverse hFE: Reverse hFE = 150 (typ.) (VCE = -2 V, IC = -4 mA). Low on resistance: RON = 1 (typ.) (IB = 5 mA). High DC current gain: hFE = 200 1200. Small package.
Transistors IC
1 Emitter 2 Base 3 Collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperatu
 Kexin |
| Related Part Number |
2SC507 | 2SCR542F3 2SC536KM | 2SC1740S-S 2SCR544R | 2SCR372P5 |
| DataSheet.es | 2020 | Contacto |