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2SC4159 PDF File ( Datasheet )

onsemi
2SC4159D
Trans GP BJT NPN 160V 0.5A 3-Pin(3+Tab) TO-220ML

PDF Datasheet
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2SC4159 Description
High-Voltage Switching/AF 100W Driver Applications

Ordering number:EN2535 PNP, NPN Epitaxial Planar Silicon Transistors 2SA1606, 2SC4159 High-Voltage Switching, AF 100W Driver Applications Applications · High-voltage switching, AF power amplifier, 100W output predrivers. Package Dimensions unit:mm 2041 [2SA1606, 2SC4159] Features · Micaless package facilitating mounting. ( ) : 2SA1606 E : Emitter C : Collector B : Base SANYO : TO-220ML Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-
Sanyo Semicon Device
Sanyo Semicon Device
Silicon NPN Power Transistor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4159 DESCRIPTION ·High Collector-Emitter Breakdown VoltageV(BR)CEO= 160V (Min) ·Large Current Capacity ·Complement to Type 2SA1606 APPLICATIONS ·Designed for high-voltage switching, AF power amplifier, 100W output predrivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w ww VALUE s c s .i UNIT 180 V 1
Inchange Semiconductor
Inchange Semiconductor



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2SCR554R  |  2SC6145A  



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