2SC4135 PDF File ( Datasheet )

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4135 DESCRIPTION ·High breakdown voltage and large current capacity ·Fast switching speed ·Small and slim package ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·Complementary to 2SA1593 APPLICATIONS ·Power supplies, relay drivers,lamp drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emit

Ordering number:ENN2511A PNP, NPN Epitaxial Planar Silicon Transistors 2SA1593, 2SC4135 High-Voltage Switching Applications Applications · Power supplies, relay derivers, lamp drivers. Features · Adoption of FBET, MBIT processes. · High breakdown voltage and large current capacity. · Fast switching speed. · Small and slim package permitting 2SA1593, 2SC4135-applied sets to be made more compact. Package Dimensions unit:mm 2045B [2SA1593, 2SC4135] 6.5 5.0 2.3 4 0.5 5.5 1.5 7.0 unit:mm 2