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2SC3709A PDF File ( Datasheet )

Toshiba
2SC3709A-Y
Power Bipolar Transistor, 12A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin

PDF Datasheet
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2SC3709A Description
High-Current Switching Applications

2SC3709A TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3709A High-Current Switching Applications Unit: mm Low collector saturation voltage: VCE (sat) = 0.4 V (max) High-speed switching: tstg = 1.0 s (typ.) Complementary to 2SA1451A Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Symbol VCBO
Toshiba
Toshiba



Related Part Number

2SC5704-T3-A  |  2SC1959M  

2SC4617FRA  |  2SC5800  

2SC5754-T2-A  |  2SC1629  



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