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2SC3659 PDF File ( Datasheet )
Datasheet| Distributor | Stock | 1 | Link | ||
|---|---|---|---|---|---|
| Classic Components | 848 | Visit Site | |||
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| 2SC3659 Description |
(2SC3658 / 2SC3659) Transistor
 Hitachi Semiconductor |
| Silicon NPN Power Transistors
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC3659
DESCRIPTION ·High Breakdown Voltage: VCES= 1700V (Min) ·Built-in Damper Didoe
APPLICATIONS ·Designed for high voltage, high power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER VALUE UNIT
VCES
Collector-Emitter Voltage
1700
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current- Continuous
8
A
PC
Collector Power Dissipation @ TC=25℃
50
W
TJ
Junction Te
 Inchange Semiconductor |
| Related Part Number |
2SC4806 | 2SC2528 2SCR542P | 2SC536M 2SC2432 | 2SC4461 |
| DataSheet.es | 2020 | Contacto |