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2SC3360 PDF File ( Datasheet )
Renesas
2SC3360-T1B-A
Small Signal Bipolar Transistor, 0.1A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon
Datasheet| Distributor | Stock | 1 | Link | ||
|---|---|---|---|---|---|
| Weyland Electronics Group Pte. Ltd. | 18,000 | 9.72 | Visit Site | ||
| Win Source | 6,000 | Visit Site | |||
| Worldway Electronics | 9,933 | Visit Site | |||
| Chipsmall Limited | 21,800 | 2.48133 | Visit Site | ||
| Run Hong Electronics | 9,930 | 0.2023 | Visit Site | ||
| SHENGYU ELECTRONICS | 5,166 | 1.5314 | Visit Site | ||
| ODG (Origin Data Global) | 2,542 | Visit Site | |||
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| 2SC3360 Description |
HIGH VOLTAGE AMPLIFIER AND SWITCHING NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD
 NEC |
| NPN Silicon Epitaxial Transistor
SMD Type
NPN Silicon Epitaxial Transistor 2SC3360
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Transistors
Unit: mm
High DC current gain.hFE=90 to 450
+0.1 2.4-0.1
High voltage VCEO=200V
+0.1 1.3-0.1
1
+0.1 0.95-0.1 +0.1 1.9-0.1
2
0.55
0.4
Features
3
+0.05 0.1-0.01
+0.1 0.97-0.1
1.Base 2.Emitter 3.collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temp
 Kexin |
| Related Part Number |
2SC2717M | 2SC1740S-R 2SC6017 | 2SC33725 2SC4714 | 2SC4134 |
| DataSheet.es | 2020 | Contacto |