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Download 2SC3336.PDF
| 2SC3336 Description |
| Silicon NPN Triple Diffused
2SC3336
Silicon NPN Triple Diffused
Application
High voltage, high speed and high power switching
Outline
TO-3P
1. Base 2. Collector (Flange) 3. Emitter
1
2
3
2SC3336
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Base current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C Symbol VCBO VCEO VEBO IC I C(peak) IB PC * Tj Tstg
1
Hitachi Semiconductor |
| SILICON POWER TRANSISTOR
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3336
DESCRIPTION ·With TO-3P(I) package ·High voltage,high speed APPLICATIONS ·For high voltage ; high speed and high power switching applications
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3P(I)) and symbol DESCRIPTION
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCEO VEBO IC ICM IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emit
SavantIC |
| Related Part Number |
2SC144 | 2SC3714 2SCR523UB | 2SC1362 2SC3834Y | 2SCR543D |
| DataSheet.es | 2020 | Contacto |