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2SC2983 PDF File ( Datasheet )
Datasheet| Distributor | Stock | 1 | Link | ||
|---|---|---|---|---|---|
| TME | 2,047 | 0.452 | Visit Site | ||
| Mouser | 2,445 | 0.56 | Visit Site | ||
| Component Stockers USA | 6,492 | 0.6 | Visit Site | ||
| UnikeyIC | 25 | 0.336 | Visit Site | ||
| DigiKey | 2,470 | 0.42 | Visit Site | ||
| Anlinkda | 33,586 | 0.667 | Visit Site | ||
| RC Electronics | 30,168 | 0.49 | Visit Site | ||
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| 2SC2983 Description |
| Silicon NPN Power Transistor
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC2983
DESCRIPTION ·Excellent linearity of hFE ·Low collector-to-emitter saturation voltage ·Fast switching speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·High transistor frequency
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
160 V
VCEO
Collector-Emitter Voltage
160 V
VEBO
Emitter-Base Voltage
 Inchange Semiconductor |
| Silicon NPN Epitaxial Type Transistor
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC2983
Power Amplifier Applications Driver Stage Amplifier Applications
2SC2983
Unit: mm
High transition frequency: fT = 100 MH- (typ.) Complementary to 2SA1225
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 160 V
Collector-emitter voltage
VCEO 160 V
Emitter-base voltage
VEBO 5 V
Collector current
Base current
Collector power dissipation
Ta = 25°C Tc = 25°C
IC IB
 Toshiba Semiconductor |
| Related Part Number |
2SCR372P | 2SC6090 2SC5345U | 2SC3738 2SCR554R | 2SC6145A |
| DataSheet.es | 2020 | Contacto |