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| 2SC2929 Description |
| MOLD TYPE BIPOLAR TRANSISTORS
ETC |
| Silicon NPN Power Transistor
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC2929
DESCRIPTION ·High Collector-Emitter Breakdown Voltage: V(BR)CEO= 400V(Min) ·High Switching Speed ·High Reliability APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL VCBO VCEO VCEO(SUS) VEBO IC IB
B
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitt
INCHANGE |
| Related Part Number |
2SCR586D | 2SC3710A 2SCR523M | 2SCR542PFRA 2SC3734LT1 | 2SCR552P5 |
| DataSheet.es | 2020 | Contacto |