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2SC2655 PDF File ( Datasheet )



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Toshiba
2SC2655
Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

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2SC2655 Description
Silicon NPN Epitaxial Type TRANSISTOR

2SC2655 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2655 Power Amplifier Applications Power Switching Applications Industrial Applications Unit: mm Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) High collector power dissipation: PC = 900 mW High-speed switching: tstg = 1.0 s (typ.) Complementary to 2SA1020. Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Col
Toshiba Semiconductor
Toshiba Semiconductor
Silicon NPN Transistor ( 50V, 2A )

*Low saturation voltage VCE(SAT)= 0.5V (Max.) *High speed switching time tstg=1.0 s (Typ.)
Unisonic Technologies
Unisonic Technologies



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