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2SC2510A PDF File ( Datasheet )

Toshiba
2SC2510A
RF Power Bipolar Transistor, 1-Element, High Frequency Band, Silicon, NPN

PDF Datasheet
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2SC2510A Description
SILICON NPN EPITAXIAL PLANAR TYPE

2SC2510A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2510A 2~30MH- SSB LINEAR POWER AMPLIFIER APPLICATIONS (28V SUPPLY VOLTAGE USE) Unit in mm - - - - - Specified 28V, 28MH- Characteristics Output Power Power Gain Collector Efficiency : Po = 150WPEP (Min.) : Gp = 12.2dB (Min.) : ηC = 35% (Min.) Intermodulation Distortion : IMD = 30dB (Max.) ABSOLUTE MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Ba
Toshiba Semiconductor
Toshiba Semiconductor



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