2SB985 PDF File ( Datasheet )

Ordering number:1244C PNP, NPN Epitaxial Planar Silicon Transistors 2SB985, 2SD1347 Large-Current Driving Applications Applcations · Power supplies, relay drivers, lamp drivers, electrical equipment. Package Dimensions unit:mm 2006A [2SB985, 2SD1347] Features · Adoption of FBET, MBIT processes. · Low saturation voltage. · Large current capacity and wide ASO. ( ) : 2SB985 EIAJ : SC-51 SANYO : MP Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage C

Transys Electronics L I M I T E D TO-92MOD Plastic-Encapsulated Transistors 2SB985 TO-92MOD 1. EMITTER 2. COLLECTOR 3. BASE TRANSISTOR (PNP) FEATURES Power dissipation PCM: 1 W (Tamb=25℃) Collector current -3 A ICM: Collector-base voltage -60 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector c