2SB1261 PDF File ( Datasheet )

2SB1261 Transistor(PNP) 1. BASE 1 2. COLLECTOR 3. EMITTER TO-252-2L Features High hFE hFE=100 to 400 Low vCE(sat) vCE(sat) ≤0.3V MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value VCBO Collector-Base Voltage -60 VCEO Collector-Emitter Voltage -60 VEBO Emitter-Base Voltage -7 IC Collector Current -Continuous -3 PD Collector Power Dissipation 2 TJ Junction Temperature 150 Tstg Storage Temperature -55-150 Units V V V A W ℃ ℃ Dimensions in inch

2SB1261 Rev.E May.-2016 DATA SHEET 描述 , Descriptions TO-252 塑封封 PNP 半 三 管。Silicon PNP transistor in a TO-252 Plastic Package.  特征 , Features hFE 性好， 和 降低，耗散功率大。 Excellent hFE linearity, low VCE(sat), high PC. 用途 , Applications 用于音 放大 路、 路，特 是混合集成 路。 Audio frequency amplifier and switching, especially in hybrid integrated circuits applications. 部等效 路 , Equivalent Circuit 引脚排列 ,