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| 2SB1018 Description |
| SILICON POWER TRANSISTOR
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1018
DESCRIPTION ·With TO-220Fa package ·Low saturation voltage ·Complement to type 2SD1411 APPLICATIONS ·High current switching applications ·Power amplifier applications
PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol DESCRIPTION
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCEO VEBO IC IB PARAMETER Collector-base voltage Collector -emitter voltage Emitter-base volta
SavantIC |
| TRANSISTOR (HIGH CURRENT SWITCHING/ POWER AMPLIFIER APPLICATIONS)
2SB1018A
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process)
2SB1018A
High Current Switching Applications Power Amplifier Applications
Unit: mm
High collector current: IC = 7 A Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 4 A) Complementary to 2SD1411A
Absolute Maximum Ratings (Tc = 25°C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperatu
Toshiba Semiconductor |
| Related Part Number |
2SB526 | 2SBF20 2SBF60 | 2SB100 2SB400 | 2SB1152 |
| DataSheet.es | 2020 | Contacto |