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2SB1018 PDF File ( Datasheet )

Toshiba
2SB1018A-Y(F)
Trans GP BJT NPN 80V 7A 3-Pin(3+Tab) TO-220NIS
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2SB1018 Description
SILICON POWER TRANSISTOR

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1018 DESCRIPTION ·With TO-220Fa package ·Low saturation voltage ·Complement to type 2SD1411 APPLICATIONS ·High current switching applications ·Power amplifier applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PARAMETER Collector-base voltage Collector -emitter voltage Emitter-base volta

SavantIC
SavantIC
TRANSISTOR (HIGH CURRENT SWITCHING/ POWER AMPLIFIER APPLICATIONS)

2SB1018A TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process) 2SB1018A High Current Switching Applications Power Amplifier Applications Unit: mm High collector current: IC = 7 A Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 4 A) Complementary to 2SD1411A Absolute Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperatu

Toshiba Semiconductor
Toshiba Semiconductor




Related Part Number

2SB526  |  2SBF20  

2SBF60  |  2SB100  

2SB400  |  2SB1152  



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