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| 2SAR586D Description |
| Middle Power Transistors
2SAR586D
PNP -5.0A -80V Middle Power Transistor
Parameter
VCEO IC
Value
-80V -5A
lFeatures
1) Suitable for Middle Power Driver. 2) Complementary NPN Types : 2SCR586D. 3) Low VCE(sat) VCE(sat)=-320mV(Max.). (IC, IB=-2A, -100mA)
lOutline
TO-252 SC-63
CPT
lInner circuit
Datasheet
lApplication LOW FREQUENCY AMPLIFIER
lPackaging specifications
Part No.
Package
2SAR586D
TO-252 (CPT)
Package size
Taping code
Reel size (mm)
Tape width (mm)
Basic o
ROHM Semiconductor |
| Silicon PNP Power Transistor
isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SAR586D
DESCRIPTION ·Suitable for middle power drivers ·Low VCE(sat)
VCE(sat)≤-0.32V@(IC=-2A,IB=-100mA) ·Complementary NPN types:2SCR586D ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Low frequency amplifier
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-80 V
VCEO
Collector-Emitter Voltage
-80 V
VEB
Inchange Semiconductor |
| Related Part Number |
2SA1015 | 2SA733-Q 2SA1080 | 2SA1797U 2SA1646-Z | 2SA1040 |
| DataSheet.es | 2020 | Contacto |