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2SAR586D PDF File ( Datasheet )

ROHM
2SAR586D3TL1
Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/Epoxy, 2 Pin
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2SAR586D Description
Middle Power Transistors

2SAR586D PNP -5.0A -80V Middle Power Transistor Parameter VCEO IC Value -80V -5A lFeatures 1) Suitable for Middle Power Driver. 2) Complementary NPN Types : 2SCR586D. 3) Low VCE(sat)   VCE(sat)=-320mV(Max.).   (IC, IB=-2A, -100mA) lOutline   TO-252   SC-63 CPT lInner circuit           Datasheet lApplication LOW FREQUENCY AMPLIFIER lPackaging specifications Part No. Package 2SAR586D TO-252 (CPT) Package size Taping code Reel size (mm) Tape width (mm) Basic o

ROHM Semiconductor
ROHM Semiconductor
Silicon PNP Power Transistor

isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SAR586D DESCRIPTION ·Suitable for middle power drivers ·Low VCE(sat) VCE(sat)≤-0.32V@(IC=-2A,IB=-100mA) ·Complementary NPN types:2SCR586D ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Low frequency amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEB

Inchange Semiconductor
Inchange Semiconductor




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