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| 2SAR572D Description |
| Silicon PNP Power Transistor
isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SAR572D
DESCRIPTION ·Suitable for middle power drivers ·Low VCE(sat)
VCE(sat)≤-0.4V@(IC=-2A,IB=-0.1A) ·Complementary NPN types:2SCR572D ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Low frequency amplifier
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-30 V
VCEO
Collector-Emitter Voltage
-30 V
VEBO
Inchange Semiconductor |
| PNP -5.0A -30V Middle Power Transistor
2SAR572D
PNP -5.0A -30V Middle Power Transistor
Parameter VCEO IC
Value -30V -5A
lFeatures
1) Suitable for Middle Power Driver. 2) Complementary NPN Types : 2SCR572D. 3) Low VCE(sat) VCE(sat)=-0.40V(Max.). (IC, IB=-2A, -100mA) 4) Lead Free, Rohs Compliant
lOutline
CPT
2SAR572D
lInner circuit
Datasheet
B: BASE C: COLLECTOR E: EMITTER
lApplication Motor driver,LED driver Power supply
lPackaging specifications
Part N
ROHM Semiconductor |
| Related Part Number |
2SA1040 | 2SA1002 2SA2202 | 2SA639 2SA1009 | 2SA155 |
| DataSheet.es | 2020 | Contacto |