2SA821S PDF File ( Datasheet )

Transistors 2SA821S 2SC1651S (94L-183-A35) (94L-519-C35) 274 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams

RoHS 2SA821S 2SA821S FEATURES Power dissipation PD: 0.25 TRANSISTOR (PNP) TO-92S 1. EMITTER 2. COLLECTOR 3. BASE W (Tamb=25℃) Collector current ICM: -0.03 A Collector-base voltage V(BR)CBO : -210 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Sym