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2SA812RLT1 PDF File ( Datasheet )

Leshan Radio Co.
L2SA812RLT1G
General Purpose Transistors PNP Ic=150mA Vceo=50V hfe=180~390 P=200mW SOT23
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2SA812RLT1 Description
General Purpose Transistors

WILLAS 2SA812xLTF1MT1H2R0U-M+ 1.0AGSeURnFeArCaE lMPOUuNrTpSoCHsOeTTTKYraBnARsRiIsERtoRErsCTIFIERS -20V- 200V FM1200-M+ SOD-123+ PACKAGE Pb Free Product Features Package outline Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. FE ALToUwRpErofile surface mounted application in order to optimize board space. HLigohwVpooltwageer:loVsCsEO, h=ig-5h0eVff.iciency. EHpiitgahxiacluprrlaennatrctayppea.bility, low forward voltage d
WILLAS
WILLAS



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