2SA684 PDF File ( Datasheet )

2SA683 , 2SA684 PNP Silicon Epitaxial Planar Transistor for low frequency power amplification and driver amplification The transistor is subdivided into three group, Q, R and S according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Peak Collector Current Collector Power Dissipation Junction

Transistor 2SA683, 2SA684 Silicon PNP epitaxial planer type For low-frequency power amplification and driver amplification Complementary to 2SC1383 and 2SC1384 5.9± 0.2 Unit: mm 4.9± 0.2 q q Complementary pair with 2SC1383 and 2SC1384. Allowing supply with the radial taping. (Ta=25˚C) Ratings 30 60 25 50 5 1.5 1 1 150 55 ~ +150 Unit V 2.54± 0.15 +0.3 +0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SA683 2SA684 2SA683 VCBO VCEO VEBO ICP IC PC Tj