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2SA2121 PDF File ( Datasheet )

Toshiba
2SA2121-O(Q)
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2SA2121 Description
Silicon PNP Power Transistor

INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2SA2121 DESCRIPTION ·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -200V(Min) ·Complement to Type 2SC5949 APPLICATIONS ·Power amplifier applications ·Recommended for audio frequency amplifier output stage. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -200 V

Inchange Semiconductor
Inchange Semiconductor
Power Amplifier Applications

2SA2121 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA2121 Power Amplifier Applications - - Complementary to 2SC5949 Recommended for audio frequency amplifier output stage. Unit: mm Absolute Maximum Ratings (Tc = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 200 200 5 15 1.5 220 150 5

Toshiba
Toshiba




Related Part Number

2SA2140  |  2SAR544P5  

2SA1499  |  2SAR293P5  

2SA1943B  |  2SA1261-Z  



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