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| 2SA2121 Description |
| Silicon PNP Power Transistor
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA2121
DESCRIPTION ·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -200V(Min) ·Complement to Type 2SC5949
APPLICATIONS ·Power amplifier applications ·Recommended for audio frequency amplifier output stage.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-200
V
VCEO
Collector-Emitter Voltage
-200
V
Inchange Semiconductor |
| Power Amplifier Applications
2SA2121
TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SA2121
Power Amplifier Applications
- - Complementary to 2SC5949 Recommended for audio frequency amplifier output stage. Unit: mm
Absolute Maximum Ratings (Tc = 25°C)
Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 200 200 5 15 1.5 220 150 5
Toshiba |
| Related Part Number |
2SA2140 | 2SAR544P5 2SA1499 | 2SAR293P5 2SA1943B | 2SA1261-Z |
| DataSheet.es | 2020 | Contacto |