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2SA2061 PDF File ( Datasheet )
Toshiba
2SA2061(TE85L,F)
Small Signal Bipolar Transistor, 2.5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon
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| 2SA2061 Description |
| Silicon PNP Epitaxial Type
TOSHIBA Transistor Silicon PNP Epitaxial Type
2SA2061
High-Speed Switching Applications DC-DC Converter Applications Strobe Applications
2SA2061
Unit: mm
High DC current gain: hFE = 200 to 500 (IC = 0.5 A) Low collector-emitter saturation voltage: VCE (sat) = 0.19 V (max) High-speed switching: tf = 40 ns (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 20 V
Collector-emitter voltage
VCEO 20 V
Emitter-base voltage
VEBO
 Toshiba Semiconductor |
| Related Part Number |
2SA1744 | 2SA1001 2SA2202 | 2SA639 2SA1657 | 2SA1666U |
| DataSheet.es | 2020 | Contacto |