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2SA1802 PDF File ( Datasheet )

Toshiba
2SA1802
Power Bipolar Transistor, 3A I(C), 10V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin
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2SA1802 Description
Silicon PNP Epitaxial Type Transistor

TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1802 Strobe Flash Applications Medium Power Amplifier Applications 2SA1802 Unit: mm · Excellent hFE linearity : hFE (1) = 200 to 600 (VCE = 2 V, IC = 0.5 A) : hFE (2) = 140 (min), 200 (typ.) (VCE = 2 V, IC = 3 A) · Low collector saturation voltage : VCE (sat) = 0.5 V (max) (IC = 3 A, IB = 60 mA) · Complementary to 2SC4681 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter vol

Toshiba Semiconductor
Toshiba Semiconductor




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