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| 2SA1802 Description |
| Silicon PNP Epitaxial Type Transistor
TOSHIBA Transistor Silicon PNP Epitaxial Type
2SA1802
Strobe Flash Applications Medium Power Amplifier Applications
2SA1802
Unit: mm
· Excellent hFE linearity : hFE (1) = 200 to 600 (VCE = 2 V, IC = 0.5 A) : hFE (2) = 140 (min), 200 (typ.) (VCE = 2 V, IC = 3 A)
· Low collector saturation voltage : VCE (sat) = 0.5 V (max) (IC = 3 A, IB = 60 mA)
· Complementary to 2SC4681
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter vol
Toshiba Semiconductor |
| Related Part Number |
2SA812QLT1 | 2SA818 2SA1040 | 2SA1002 2SA639S | 2SA1009 |
| DataSheet.es | 2020 | Contacto |