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| 2SA1744 Description |
| Silicon PNP Power Transistor
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA1744
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -60V(Min) ·High DC Current Gain-
: hFE= 100(Min)@ (VCE= -2V , IC= -3A) ·Low Saturation Voltage-
: VCE(sat)= -0.3V(Max)@ (IC= -8A, IB= -0.4A)
APPLICATIONS ·This type of power transistor is developed for high-speed
switching and features a high hFE at low VCE(sat),which is ideal for use as a driver in DC, DC converters and actuators.
ABSO
Inchange Semiconductor |
| PNP SILICON EPITAXIAL TRANSISTOR
DATA SHEET
SILICON POWER TRANSISTOR
2SA1744
PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
The 2SA1744 is a power transistor developed for high-speed switching and features a high hFE at Low VCE(sat). This transistor is ideal for use as a driver in DC, DC converters and actuators. In addition, a small resin-molded insulation type package contributes to high-density mounting and reduction of mounting cost.
PACKAGE DRAWING (UNIT: mm)
FEATURES
High hFE and low VCE(sat): hFE ≥ 100
NEC |
| Related Part Number |
2SA812QLT1 | 2SA818 2SA639S | 2SA651 2SA2151A | 2SA733-R |
| DataSheet.es | 2020 | Contacto |