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| 2SA1214 Description |
| Silicon PNP Power Transistor
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA1214
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
V(BR)CEO= -50V (Min) ·Good Linearity of hFE ·Wide Area of Safe Operation
APPLICATIONS ·Desinged for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
-60 V
VCEO Collector-Emitter Voltage
-50 V
VEBO Emitter-Base Voltage
-5 V
IC Collector Current-Continuous
C
Inchange Semiconductor |
| Trans GP BJT PNP 160V 15A 3-Pin MT-200
New Jersey Semiconductor |
| Related Part Number |
2SA995 | 2SA953 2SA2017 | 2SAR553P5 2SAR586D | 2SA1265 |
| DataSheet.es | 2020 | Contacto |