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| 2SA1040 Description |
| Silicon PNP Power Transistors
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification 2SA1040
DESCRIPTION ·High Current Capability ·Good Linearity of hFE ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -120V(Min.) ·Complement to Type 2SC2430
APPLICATIONS ·Designed for power switching , high frequency power
amplifer, switching regulator and DC, DC converters.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-120
V
VCEO
Collector-Emitter Vo
Inchange Semiconductor |
| Related Part Number |
2SA1069-Z | 2SA812QLT1 2SA818 | 2SA1002 2SA639S | 2SA1649 |
| DataSheet.es | 2020 | Contacto |