2N7002KG8 PDF File ( Datasheet )

Main Product Characteristics VDSS 60V RDS(on) 7.5ohm(max.) ID A Features and Benefits Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150℃ operating temperature Lead free product SOT-363 2N7002KG8 60V MOSFET Schematic Diagram Description It utilizes the latest trench processing techniques to achieve the high cell density and red

Main Product Characteristics: VDSS 60V RDS(on) 7.5ohm(max.) ID A Features and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150℃ operating temperature SOT-363 2N7002KG8 Schematic diagram Description: It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with