2N6379 PDF File ( Datasheet )

INCHANGE Semiconductor isc Silicon PNP Power Transistors isc Product Specification 2N6379 DESCRIPTION ·Low Collector Saturation Voltage ·High DC Current Gain ·High Power Dissipation APPLICATIONS ·Designed for use in industrial-military power amplifier and switching circuit application. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -140 V VCE0 Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -6 V IC Collector Current-C