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| 2N6306 Description |
| Bipolar NPN Device
2N6306
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44)
6.35 (0.25) 9.15 (0.36)
1.52 (0.06) 3.43 (0.135)
Bipolar NPN Device in a Hermetically sealed TO3
Metal Package.
38.61 (1.52) 39.12 (1.54) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17.15 (0.675) 0.97 (0.060) 1.10 (0.043)
22.23 (0.875)
max.
12
3 (case) 3.84 (0.151) 4.09 (0.161)
7.92 (0.312) 12.70 (0.50)
1 Base
TO3 (TO204AA) PINOUTS
2 Emitter Case - Collector
Bipolar NPN Device.
VCEO = 250V
IC = 8A
All Se
Seme LAB |
| NPN POWER SILICON TRANSISTOR
TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500, 498 Devices 2N6306 2N6308 Qualified Level JAN JANTX JANTXV
MAXIMUM RATINGS Ratings
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current Total Power Dissipation
2N6306 2N6308 250 350 500 700 8.0 8.0 4.0 @ TC = +250C (1) 125 PT @ TC = +1000C (1) 62.5 Operating & Storage Temperature Range -65 to +200 Top, Tstg 1) Between TC = +250C and TC = +1750C, linear derating factor averag
Microsemi Corporation |
| Related Part Number |
2N6379 | 2N6425 2N6469 | 2N6305 2N6273 | 2N6074B |
| DataSheet.es | 2020 | Contacto |