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2N5937 PDF File ( Datasheet )

Inchange Semiconductor
2N5937
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2N5937 Description
Bipolar NPN Device

2N5937 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17.15 (0.675) 0.97 (0.060) 1.10 (0.043) 22.23 (0.875) max. 12 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) 1 Base TO3 (TO204AA) PINOUTS 2 Emitter Case - Collector Bipolar NPN Device. VCEO = 160V IC = 30A All S

Seme LAB
Seme LAB
Silicon NPN Power Transistors

INCHANGE Semiconductor isc Silicon NPN Power Transistors isc Product Specification 2N5937 DESCRIPTION ·DC Current Gain- : hFE= 20-100@IC= 30A ·Low Collector Saturation Voltage- : VCE(sat)= 2.0V(Max)@ IC= 20A APPLICATIONS ·Designed for use in power switching circuits,audio amplifiers, series and shunt-regulators, driver and output stages,DC-DC converters, inverters, and solenoid , relay driver service. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base

Inchange Semiconductor
Inchange Semiconductor




Related Part Number

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