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| 2N5937 Description |
| Bipolar NPN Device
2N5937
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44)
6.35 (0.25) 9.15 (0.36)
1.52 (0.06) 3.43 (0.135)
Bipolar NPN Device in a Hermetically sealed TO3
Metal Package.
38.61 (1.52) 39.12 (1.54) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17.15 (0.675) 0.97 (0.060) 1.10 (0.043)
22.23 (0.875)
max.
12
3 (case) 3.84 (0.151) 4.09 (0.161)
7.92 (0.312) 12.70 (0.50)
1 Base
TO3 (TO204AA) PINOUTS
2 Emitter Case - Collector
Bipolar NPN Device.
VCEO = 160V
IC = 30A
All S
Seme LAB |
| Silicon NPN Power Transistors
INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
2N5937
DESCRIPTION ·DC Current Gain-
: hFE= 20-100@IC= 30A ·Low Collector Saturation Voltage-
: VCE(sat)= 2.0V(Max)@ IC= 20A
APPLICATIONS ·Designed for use in power switching circuits,audio amplifiers,
series and shunt-regulators, driver and output stages,DC-DC converters, inverters, and solenoid , relay driver service.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Inchange Semiconductor |
| Related Part Number |
2N5854 | 2N5655G 2N5760 | 2N5602 2N5726 | 2N5095 |
| DataSheet.es | 2020 | Contacto |