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| 2N5759 Description |
| COMPLEMENTARY SILICON POWER TRANSISTORS
2N5758 2N5759 2N5760 NPN 2N6226 2N6227 2N6228 PNP
COMPLEMENTARY SILICON POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5758, 2N6226 series types are complementary silicon power transistors, manufactured by the epitaxial base process, designed for medium power amplifier and switching applications where high voltages are required.
MARKING: FULL PART NUMBER
TO-3 CASE
MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emit
Central Semiconductor |
| Bipolar NPN Device
2N5759
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44)
6.35 (0.25) 9.15 (0.36)
1.52 (0.06) 3.43 (0.135)
Bipolar NPN Device in a Hermetically sealed TO3
Metal Package.
38.61 (1.52) 39.12 (1.54) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17.15 (0.675) 0.97 (0.060) 1.10 (0.043)
22.23 (0.875)
max.
12
3 (case) 3.84 (0.151) 4.09 (0.161)
7.92 (0.312) 12.70 (0.50)
1 Base
TO3 (TO204AA) PINOUTS
2 Emitter Case - Collector
Bipolar NPN Device.
VCEO = 120V
IC = 6A
All Se
Seme LAB |
| Related Part Number |
2N5730 | 2N5655G 2N5602 | 2N5726 2N5794 | 2N5653 |
| DataSheet.es | 2020 | Contacto |