2N4003K PDF File ( Datasheet )

2N4003K N-Channel Enhancement Mode Power MOSFET P b Lead(Pb)-Free 1 GATE 3 DRAIN * * Low Gate Voltage Threshold Vgs(th) to Facilitate Drive Circuit Design. * Low Gate Charge for Fast Switching. * ESD Protected Gate. * Minimum Breakdown Voltage Rating of 30V. Features: * Gate Pretection Diode SOURCE 2 DRAIN CURRENT 0.5 AMPERES DRAIN SOUCE VOLTAGE 30 VOLTAGE 3 1 2 Application: * Level Shifters * Level Switches * Low Side Load Switches * Portable Applications SOT-23 Maximum Ratings(TA=25