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2N3966 PDF File ( Datasheet )

Motorola
2N3966
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-72
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2N3966 Description
JFET HIGH-FREQUENCY AMPLIFIER

2N3966 CASE 20-03, STYLE 1 TO-72 (TO-206AF) JFET HIGH-FREQUENCY AMPLIFIER N-CHANNEL DEPLETION MAXIMUM RATINGS Rating Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Gate Current @Total Device Dissipation Ta = 25°C Derate above 25°C (Free Air) Lead Temperature (1, 16" from Case for 10 Seconds) Storage Temperature Range Symbol vDs Vdg vgs "G PD TL Tstg Value 30 30 30 10 300 1.71 300 -55 to 200 Unit Vdc Vdc Vdc juA mW mW, °C °C °C ELECTRICAL CHARACTERISTICS (Ta = 25°C unles

Motorola Semiconductors
Motorola Semiconductors
Junction(2N3xxx) -Gate Field-Effect Transistor

BV GSS VP Max. (V) 5.0 2.0 6.0 3.0 6.0 6.0 6.0 5.0 6.0 @ VD S (V) 20 20 15 10 15 15 10 20 10 & ID Min. (nA) 1.0 1.0 0.5 1.0 1.0 1.0 10.0 1.0 1.0 (mmho) 2.00 1.00 3.00 0.08 2.50 - Gfs Max. (mmho) 3.00 2.00 6.50 0.25 - Part No. Min. (V) Min. (V) 2.0 0.6 1.0 2.5 2.5 4.0 2.0 1.0 Ciss Max. (pF) 4 4 6 3 4 4 6 5 5 Crss Max. (pF) 1.2 1.2 3.0 1.5 0.8 0.9 1.5 1.3 1.2 Package Bulk Outline (Typ. in mm) 2N3684 2N3686 2N3822 2N4118A 2N4416A 2N4416 2N3966 2N3967 2N5397 50 50 50 40 35 30 30 30 2

Taitron Components
Taitron Components




Related Part Number

2N3198  |  2N3418S  

2N3508  |  2N3497  

2N3208  |  2N3458  



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