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| 2N3966 Description |
| JFET HIGH-FREQUENCY AMPLIFIER
2N3966
CASE 20-03, STYLE 1
TO-72 (TO-206AF)
JFET HIGH-FREQUENCY AMPLIFIER
N-CHANNEL DEPLETION
MAXIMUM RATINGS
Rating Drain-Source Voltage Drain-Gate Voltage
Gate-Source Voltage
Gate Current
@Total Device Dissipation Ta = 25°C
Derate above 25°C (Free Air) Lead Temperature
(1, 16" from Case for 10 Seconds) Storage Temperature Range
Symbol vDs Vdg vgs
"G
PD
TL
Tstg
Value 30 30 30 10 300
1.71
300
-55 to 200
Unit Vdc Vdc Vdc juA
mW
mW, °C
°C
°C
ELECTRICAL CHARACTERISTICS (Ta = 25°C unles
Motorola Semiconductors |
| Junction(2N3xxx) -Gate Field-Effect Transistor
BV
GSS
VP Max. (V) 5.0 2.0 6.0 3.0 6.0 6.0 6.0 5.0 6.0
@
VD S (V) 20 20 15 10 15 15 10 20 10
&
ID Min. (nA) 1.0 1.0 0.5 1.0 1.0 1.0 10.0 1.0 1.0 (mmho) 2.00 1.00 3.00 0.08 2.50 -
Gfs Max. (mmho) 3.00 2.00 6.50 0.25 -
Part No.
Min. (V)
Min. (V) 2.0 0.6 1.0 2.5 2.5 4.0 2.0 1.0
Ciss Max. (pF) 4 4 6 3 4 4 6 5 5
Crss Max. (pF) 1.2 1.2 3.0 1.5 0.8 0.9 1.5 1.3 1.2
Package Bulk
Outline (Typ. in mm)
2N3684 2N3686 2N3822 2N4118A 2N4416A 2N4416 2N3966 2N3967 2N5397
50 50 50 40 35 30 30 30 2
Taitron Components |
| Related Part Number |
2N3198 | 2N3418S 2N3508 | 2N3497 2N3208 | 2N3458 |
| DataSheet.es | 2020 | Contacto |