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| 2N2422 Description |
| SILICON UNIJUNCTION TRANSISTOR
DIGITRON SEMICONDUCTORS
2N2417 - 2N2422, A, B
SILICON UNIJUNCTION TRANSISTOR
MAXIMUM RATINGS
Rating
Symbol
Value
Power dissipation(1)
PD 350
RMS emitter current
IE 70
Peak pulse emitter current (2) ie 2
Emitter reverse voltage
VB2E
60
Interbase voltage
VB2B1
65
Operating junction temperature range
TJ
-65 to 175
Storage temperature range
Tstg -65 to 175
Note 1: Derate 2.33mW, °C increase in ambient temperature. The total power dissipation must be limited by the external ci
Digitron Semiconductors |
| SILICON UNIJUNCTION TRANSISTOR
DIGITRON SEMICONDUCTORS
2N2417 - 2N2422, A, B
SILICON UNIJUNCTION TRANSISTOR
MAXIMUM RATINGS
Rating
Symbol
Value
Power dissipation(1)
PD 350
RMS emitter current
IE 70
Peak pulse emitter current (2) ie 2
Emitter reverse voltage
VB2E
60
Interbase voltage
VB2B1
65
Operating junction temperature range
TJ
-65 to 175
Storage temperature range
Tstg -65 to 175
Note 1: Derate 2.33mW, °C increase in ambient temperature. The total power dissipation must be limited by the external ci
Digitron Semiconductors |
| Related Part Number |
2N2222L | 2N2421 2N2218AL | 2N2160 2N2221A | 2N2192A |
| DataSheet.es | 2020 | Contacto |