DataSheet.es    

2N120CND PDF File ( Datasheet )

Fairchild Semiconductor
HGTP2N120CND
Insulated Gate Bipolar Transistor, 13A I(C), 1200V V(BR)CES, N-Channel
Powered by Octopart



 



2N120CND Description
HGTP2N120CND

HGTP2N120CND, HGT1S2N120CNDS Data Sheet January 2000 File Number 4681.2 13A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes The HGTP2N120CND and HGT1S2N120CNDS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is

Intersil Corporation
Intersil Corporation




Related Part Number

2N15MI  |  2N1596  

2N1067  |  2N15CI  

2N15LH  |  2N15US  



DataSheet.es    |   2020   |  Contacto