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| 1N6816 Description |
| LOW LEAKAGE SCHOTTKY DIODE
2830 S. Fairview St. Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256
Features
Tungsten schottky barrier Oxide passivated structure for very low leakage currents Guard ring protection for increased reverse energy capability Epitaxial structure minimizes forward voltage drop Hermetically sealed, low profile ceramic surface mount power package Low package inductance Very low thermal resistance Available as standard polarity (strap-to-anode, 1N6816) and reverse polarity (strap-to
Microsemi Corporation |
| LOW LEAKAGE SCHOTTKY DIODE
2830 S. Fairview St. Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256
Features
Tungsten schottky barrier Oxide passivated structure for very low leakage currents Guard ring protection for increased reverse energy capability Epitaxial structure minimizes forward voltage drop Hermetically sealed, low profile ceramic surface mount power package Low package inductance Very low thermal resistance Available as standard polarity (strap-to-anode, 1N6816) and reverse polarity (strap-to
Microsemi Corporation |
| Related Part Number |
1N6015 | 1N6316D 1N6041 | 1N6028 1N6354D | 1N6022A |
| DataSheet.es | 2020 | Contacto |