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1N649-1 PDF File ( Datasheet )

Microchip
1N649-1/TR
600V 400Ma Signal Or Computer Diode Tht Tr Do-35 Rohs Compliant: Yes |Microchip Technology 1N649-1/TR

PDF Datasheet
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1N649-1 Description
Silicon Switching Diode

1N649-1 FEATURES 1N649-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500, 240 SILICON RECTIFIER METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS AT 25 °C Operating Temperature: Storage Temperature: Surge Current A, sine 8.3mS: Total Power Dissipation: Operating Current: Operating Current: Derating Factor: Derating Factor: D.C. Reverse Voltage (VRWM): -65°C to +175°C -65°C to +175°C 5.0A 500mW 400mA, TA= +25°C 150mA, TA= +150°C 2mA, °C abo
Microsemi
Microsemi



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